[{"data": {"name": "Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2\u00d71) by femtosecond laser excitation", "@type": "ScholarlyArticle", "genre": "journal-article", "author": [{"name": "Ali Oguz Er", "@type": "Person"}, {"name": "Wei Ren", "@type": "Person"}, {"name": "Hani E. Elsayed-Ali", "@type": "Person"}], "@context": "http://schema.org/", "encoding": [{"@type": "MediaObject", "contentUrl": "https://digitalcommons.odu.edu/cgi/viewcontent.cgi?article=1106&context=ece_fac_pubs", "encodingFormat": "application/pdf"}], "publisher": {"name": "AIP Publishing", "@type": "Organization"}, "identifier": [{"@type": "PropertyValue", "value": "10.1063/1.3537813", "propertyID": "DOI"}, {"@type": "PropertyValue", "value": "CCGAbWtmP1BNs-CTad3nv6fu9PU-CDLB8VvTvyEu1-CRiYjirM7HZ3V", "propertyID": "ISCC"}], "datePublished": "2011-01-03"}, "schema": "schema.org", "mediatype": "application/ld+json"}]