[{"data": {"name": "Fabrication of High-aspect-ratio Nanohole Arrays on GaN Surface by Using Wet-chemical-assisted Femtosecond Laser Ablation", "@type": "ScholarlyArticle", "genre": "journal-article", "author": [{"name": "Seisuke Nakashima", "@type": "Person"}], "@context": "http://schema.org/", "encoding": [{"@type": "MediaObject", "contentUrl": "http://www.jlps.gr.jp/jlmn/upload/f34e524269eacf79779b9af6d853b624.pdf", "encodingFormat": "application/pdf"}], "publisher": {"name": "Japan Laser Processing Society", "@type": "Organization"}, "identifier": [{"@type": "PropertyValue", "value": "10.2961/jlmn.2011.01.0004", "propertyID": "DOI"}, {"@type": "PropertyValue", "value": "CChK2iQzKRAB1-CTa6Bf6fSMZnT-CDXTKo2fCmZ5P-CRHzM8ypNQe4u", "propertyID": "ISCC"}], "datePublished": "2011-03-01"}, "schema": "schema.org", "mediatype": "application/ld+json"}]